2N2646 Unijunction Transistor UJT

2N2646 Unijunction Transistor

Notes:

1. Derate 3mW/°C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Tow) must be limited by the external circuitry.

2. Capacitor discharge – 10μF or less, 30V or less.

3. Intrinsic standoff ration is defined by the equation : Vp – Vf / Vb2b1 Where : Vp = Peak Point Emitter Voltage; Vb2b1 = Interbase ; Vf = Emitter to Base-one Junction Diode Drop (~0.45V @ 10μA)

4. Use pulse techniques : Pulse Width ~300μS, Duty Cycle % 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.