IRF510 Power MOSFET Transistor

Dynamic dV/dt rating

Repetitive avalanche rated

175 °C operating temperature

Fast switching

Ease of paralleling

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IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements