CDIL BC108 C Bipolar NPN Silicon Transistor

• Maximum Collector-Base Voltage |Vcb|: 30 V
• Maximum Collector-Emitter Voltage |Vce|: 20 V
• Maximum Emitter-Base Voltage |Veb|: 5 V
• Max. Operating Junction Temperature (Tj): 175 °C
• Transition Frequency (ft): 150 MHz

BC108C series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.