1N60 Germanium Diode
$0.05
The 1N60 Germanium Diode is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.
Features:-
• Metal silicon junction, majority carrier conduction
• High current capability, Low forward voltage drop
• Extremely low reverse current lR
• Ultra speed switching characteristics
• Small temperature coefficient of forward characteristics
• Satisfactory Wave detection efficiency
• For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier
• Germanium Glass Diode
• RoHS Compliance
Mechanical Characteristics:-
• Case: DO-7, molded glass
• Weight:0.2 gram
• Terminals: Plated axial lead, solderable per MIL-STD-202E, Method 208
• Polarity: Color band denotes cathode end
Specification:-
| Symbol | Parameter | Value | Units |
| VRRM | Peak Repetitive Reverse Voltage | 40 | V |
| VRM | Peak Reverse Voltage | 45 | V |
| VR | DC Blocking Voltage | 20 | V |
| IO | Average Rectified Output Current | 50 | A |
| IFSM | Non-Repetitive Peak Forward Surge Current | 150 | mA |
| TJ | Operating Junction Temperature Range | − 65 to +125 | °C |
| Tstg | Storage Temperature Range | − 65 to +125 | °C |
* Product Images are shown for illustrative purposes only and may differ from actual product.
| Weight | 0.010 kg |
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